Gallium Arsenide (GaAs)

In the optoelectronics field, GaAs is often used in the manufacturing of Laser Diode (LD), Light Emitting Diode (LED), and photovoltaic devices. GaAs can be utilized in practical applications where the strength and hardness of the IR material are key factors such as for use in mirrors. It can also be used in infrared CO2 laser applications as a potential substitute for ZnSe optical lenses. VOT can supply fully finished optics as well as both unfinished fine-ground blanks or pre-generated parts for customers to finish.

VOT’s expertise in growing GaAs crystals and high-volume wafer production guarantees a product that is dependable and high quality. The high-purity GaAs single crystal produced by the VGF growth method can reach a transmittance of ≥55% in the infrared 2-12μm band after cutting, grinding and polishing. When the product thickness is thicker (≥3mm), the transmittance will gradually decrease as thickness increases, typically starting around 51%-55%.